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A fully depleted strained-silicon-on-insulator (FD-sSOI) capacitorless one-transistor dynamic random access memory (IT-DRAM) cell with a strained channel was fabricated, and the electrical characteristics of transistor and DRAM were compared with that of a conventional FD-SOI capacitorless IT-DRAM cell. The fabricated FD-sSOI DRAM cell has excellent transistor electrical parameters, such as extremely low leakage current (< 10-12 A), small subthreshold swing of 60.3 mV/dec, and high on/off current ratio of nearly 108. Furthermore, the FD-sSOI 1T-DRAM cell shows enhanced effective electron mobility and improved sensing margin compared with the FD-SOI IT-DRAM cell.
Date of Publication: Dec. 2009