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The temperature dependence of ring-oscillator delay of high-kappa /metal-gate (HKMG) and poly-Si/SiON technologies are analyzed. HKMG gate stacks drive significantly stronger threshold temperature dependence over poly-Si/SiON. This effect, together with the reduced mobility temperature sensitivity, result in higher drive current at elevated temperature for HKMG devices. This is in contrast to poly-Si/SiON technology where the low-driven current performance-limiting corner is typically at high temperature.