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An Investigation of Electrothermal Characteristics on Low-Temperature Polycrystalline-Silicon Thin-Film Transistors

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3 Author(s)
Ya-Li Tai ; Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan ; Jam-Wem Lee ; Chen-Hsin Lien

In this paper, theoretical and experimental analyses have been performed to explore the electrothermal characteristics in low-temperature polycrystalline-silicon thin-film transistors (LTPS TFTs). A theoretical simulation reveals that electrothermal effects strongly influence the performance of LTPS TFTs, particularly under high-current conditions. Measurements show that, under extremely high currents, LTPS devices demonstrate an open-circuit behavior, while the behavior of devices based on single-crystalline silicon films using an SOI CMOS process results in a short-circuit model. In summary, both the simulation and measurements indicate that grain boundaries will degrade the electrothermal properties of the LTPS thin film and suppress reliability in TFT design.

Published in:

IEEE Transactions on Device and Materials Reliability  (Volume:10 ,  Issue: 1 )