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Optical static random access memory cell using an integrated semiconductor ring laser

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6 Author(s)
Li, B. ; Dept. of Electr. & Electron. Eng., Univ. of Bristol, Bristol, UK ; Memon, M.I. ; Mezosi, G. ; Wang, Z.
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An optical static random access memory cell is experimentally demonstrated using a semiconductor ring laser set-reset flip-flop integrated with four SOAs at each output. Read and write operations at 1 Gb/s are achieved.

Published in:

Photonics in Switching, 2009. PS '09. International Conference on

Date of Conference:

15-19 Sept. 2009

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