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InAs site-controlled quantum dots (SCQDs) have been demonstrated on GaAs substrates patterned by soft photocurable nanoimprint lithography. The substrates are patterned with a dense array of 100 nm nanopores and then InAs is deposited by molecular beam epitaxy to form uniform single QD in each patterned nanopore. Strong room temperature photoluminescence (PL) obtained from uncapped sample with a single SCQD layer reveals a defect-free interface and high quality growth of QDs. A narrower PL linewidth indicates more uniformly distributed SCQDs on the patterned substrate than self-assembled QDs on an unpatterned substrate.