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We report on experimental evidence of a magnetization-controlled conductance in AlAs/GaAs/AlAs resonant tunneling diodes contacted by a (Ga,Mn)As ferromagnetic electrode. Large shifts of the resonance voltages occur as the magnetization is rotated from in-plane to out-of-plane directions resulting in a singular tunneling anisotropic magnetoresistance signal. This opens the way to control the tunneling current upon the magnetization orientation of the magnetic layer, playing the role of a magnetic gate.