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Effect of resistance of TSV's on performance of boost converter for low power 3D SSD with NAND flash memories

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7 Author(s)
Yasufuku, T. ; Univ. of Tokyo, Tokyo, Japan ; Ishida, K. ; Miyamoto, S. ; Nakai, H.
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This paper investigates the effect of the TSV resistance (RTSV) on the performance of boost converters for Solid State Drive (SSD) using circuit simulation. When RTSV is 0 Omega, both the rising time (trise) from 0 V to 15 V and the energy during boosting (Eloss) of the output voltage (VOUT) are 10.6% and 6.6% of the conventional charge pump respectively. In contrast, when RTSV is 200 Omega, for example, trise is 30.1% and Eloss is 22.8% of the conventional charge pump. Besides, VOUT cannot be boosted above 20 V when RTSV is larger than 210 Omega. Therefore, in order to maintain the advantages of the boost converter over the charge pump in terms of trise and Eloss, the reduction of RTSV is very important.

Published in:

3D System Integration, 2009. 3DIC 2009. IEEE International Conference on

Date of Conference:

28-30 Sept. 2009