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An innovative die to wafer stacking is proposed for 3D devices. Known good dices are bonded on a processed wafer thanks to direct bonding. Oxide layers or patterned oxide/copper layers are used as the bonding medium. After a first thinning, a low stress high deposition rate oxide is deposited to embed the dices. A final thinning is then done to recover a flat and smooth surface before the trough silicon vias.
Date of Conference: 28-30 Sept. 2009