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An innovative die to wafer stacking is proposed for 3D devices. Known good dices are bonded on a processed wafer thanks to direct bonding. Oxide layers or patterned oxide/copper layers are used as the bonding medium. After a first thinning, a low stress high deposition rate oxide is deposited to embed the dices. A final thinning is then done to recover a flat and smooth surface before the trough silicon vias.
Published in:
3D System Integration, 2009. 3DIC 2009. IEEE International Conference on
Date of Conference: 28-30 Sept. 2009
- Page(s):
- 1 - 4
- E-ISBN :
- 978-1-4244-4512-7
- Print ISBN:
- 978-1-4244-4511-0
- INSPEC Accession Number:
- 10951260
- Conference Location :
- San Francisco, CA
- Digital Object Identifier :
- 10.1109/3DIC.2009.5306534
- Product Type:
- Conference Publications
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