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Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films

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7 Author(s)
Panzer, Matthew A. ; Mech. Eng. Dept., Stanford Univ., Stanford, CA, USA ; Shandalov, Michael ; Rowlette, J.A. ; Oshima, Yasuhiro
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Thin-film HfO2 is a promising gate dielectric material that will influence thermal conduction in modern transistors. This letter reports the temperature dependence of the intrinsic thermal conductivity and interface resistances of 56-200-Aring-thick HfO2 films. A picosecond pump-probe thermoreflectance technique yields room-temperature intrinsic thermal conductivity values between 0.49 and 0.95 W/(mmiddotK). The intrinsic thermal conductivity and interface resistance depend strongly on the film-thickness-dependent microstructure.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 12 )