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In this paper, we continue our investigations on self-heating effects in nanoscale fully depleted (FD) silicon-on-insulator (SOI) devices with emphasis on what is the appropriate simulation domain needed for accurate modeling. In that context, we examine the influence of the underlying substrate on the current degradation in the active channel region and what needs to be the proper boundary conditions at the source/drain and gate contacts and the artificial-side boundaries. We finally examine the self-heating effect when the BOX is made of SiO 2, diamond, and AlN. As such, this paper helps one estimate the minimum and the maximum limits on-current degradation due to self-heating effects in FD SOI devices.