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A Comprehensive Study of the Resistive Switching Mechanism in \hbox {Al/TiO}_{x}/\hbox {TiO}_{2}/\hbox {Al} -Structured RRAM

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2 Author(s)
Sungho Kim ; Sch. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea ; Choi, Yang-Kyu

The conduction mechanism and resistive switching properties in a resistive-random-access-memory device composed of Al(top)/TiOx/TiO2/Al( bottom) are investigated in this paper. The active-top-electrode (TE) material aluminum interacted with the TiO2 layer and induced an oxygen-deficient TiOx layer near the TE. The naturally formed oxygen-deficient TiOx layer was confirmed by a transmission-electron-microscope energy-dispersive X-ray spectrometry analysis. The oxygen-deficient TiOx region acted as a trap for electrons and contributed to the resistive switching. The proposed mechanism and measured data are verified through simulation of a two-variable resistor model.

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Electron Devices, IEEE Transactions on  (Volume:56 ,  Issue: 12 )