By Topic

Interaction of a \hbox {CO}_{2} Laser Pulse With Tin-Based Plasma for an Extreme Ultraviolet Lithography Source

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Yezheng Tao ; Center for Energy Research, University of California at San Diego, La Jolla, CA , USA ; Mark S. Tillack ; Sam Yuspeh ; Russell A. Burdt
more authors

The interaction of a CO2 laser pulse with Sn-based plasma for a 13.5-nm extreme ultraviolet (EUV) lithography source was investigated. It was noted that a CO2 laser with wavelength of 10.6 ??m is more sensitive to surface impurities as compared with a Nd:YAG laser with wavelength of 1.06 ??m . This reveals that a CO2 laser is more likely absorbed in a thinner layer near the target surface. Compared with a Nd:YAG laser, a CO2 laser shows higher in-band (2% bandwidth) conversion efficiency (CE) with a solid Sn target due to less reabsorption of the EUV emission induced by the plasma. However, with foam targets containing low concentrations of Sn, the in-band CE is lower than that with solid Sn. The CE can be enhanced with plasma confinement. These results suggest that a driving laser with wavelength between 1.06 and 10.6 ??m may be an even better choice to generate higher CE from laser to 13.5-nm EUV emission.

Published in:

IEEE Transactions on Plasma Science  (Volume:38 ,  Issue: 4 )