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An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching

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7 Author(s)
Anderson, T.J. ; Naval Res. Lab., Washington, DC, USA ; Tadjer, M.J. ; Mastro, M.A. ; Hite, J.K.
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A novel device structure incorporating an ultrathin AlGaN barrier layer capped by an AlN layer in the source-drain access regions has been implemented to reliably control threshold voltage in AlGaN/GaN high-electron-mobility transistors. A recessed-gate structure has been used to decrease 2-D electron gas (2DEG) density under the gate, thus controlling threshold voltage while maintaining low on-resistance and high current density. The structure presented in this letter implements an ultrathin AlGaN structure grown by metal-organic chemical vapor deposition capped with AlN to maintain a high 2DEG density in the access regions. A selective wet etch using heated photoresist developer is used to selectively etch the AlN layer in the gate region to the AlGaN barrier. We have demonstrated a repeatable threshold voltage of +0.21 V with 4-nm AlGaN barrier layer thickness.

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Electron Device Letters, IEEE  (Volume:30 ,  Issue: 12 )