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Hole Mobility in Ultrathin Double-Gate SOI Devices: The Effect of Acoustic Phonon Confinement

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4 Author(s)
Donetti, L. ; Dept. de Electron. y Tecnol. de Comput., Univ. de Granada, Granada, Spain ; Gamiz, F. ; Rodriguez, N. ; Godoy, A.

We show that the effect of phonon confinement in ultrathin double-gate silicon-on-insulator (DGSOI) transistors on hole mobility is weaker than that predicted for electron mobility. To do so, confined phonon modes in SOI devices are computed, employing an elastic continuum model of acoustic phonons in a three-layer structure. A self-consistent k middot p-Poisson solver has been developed for the valence-band structure calculation, and Kubo-Greenwood formalism is used to compute the hole mobility in ultrathin DGSOI transistors under the combined effect of confined phonon and surface-roughness scattering.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 12 )