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Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films

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3 Author(s)
Akiyama, M. ; Measurement Solution Research Center, National Institute of Advanced Science and Technology, 807-1 Shuku, Tosu, Saga 841-0052, Japan ; Kano, K. ; Teshigahara, A.

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The authors have investigated the influence of growth temperature and scandium concentration on the piezoelectric response of scandium aluminum nitride (ScxAl1-xN) films prepared by dual reactive cosputtering. The piezoelectric response strongly depends on the growth temperature and scandium concentration. The piezoelectric response of the films prepared at 400 °C gradually increases with increasing scandium concentration. On the other hand, the piezoelectric response of the films prepared at 580 °C drastically decreases and increases in the scandium concentration from 30% to 40%. We think that the drastic change of the piezoelectric response is due to the disordered grain growth.

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Applied Physics Letters  (Volume:95 ,  Issue: 16 )