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A fully integrated 2.4/3.4 GHz dual-band CMOS power amplifier with variable inductor

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4 Author(s)
Hyun Jin Yoo ; Dept. of Electron. Eng., Kwangwoon Univ., Seoul, South Korea ; Kang Hyuk Lee ; Hyuk Jun Oh ; Yun Seong Eo

A 2.4/3.4 GHz Dual-band CMOS power amplifier using proposed variable inductor is presented. The variable inductor is used for the load of driver amplifier stage. The measured P1 dB and PAE of dual band PA is 22.4 dBm and 28.8% at 2.4 GHz, and 18.8 dBm and 14.4% at 3.4 GHz, respectively. Also the measured output power at which the achieved EVM is -25 dB is 15 dBm at 2.4 GHz and 12.7 dBm at 3.4 GHz. The chip is fabricated using 0.13 um CMOS process and occupies 1.2 mm × 1 mm including pads.

Published in:

Microwave Conference, 2009. EuMC 2009. European

Date of Conference:

Sept. 29 2009-Oct. 1 2009