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Suitability of integrated protection diodes from diverse semiconductor technologies

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4 Author(s)
van Wanum, M. ; TNO Defence, Security & Safety, The Hague, Netherlands ; Lebouille, T. ; Visser, G. ; van Vliet, F.E.

In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are close in performance, but the possibility to integrate high quality passives will give better performance for gallium arsenide and gallium nitride based protection diodes.

Published in:

Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European

Date of Conference:

28-29 Sept. 2009