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A 0.7-V 60-GHz low-power LNA with forward body bias technique in 90 nm CMOS process

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5 Author(s)
Wei-Heng Lin ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Jeng-Han Tsai ; Yung-Nien Jen ; Tian-Wei Huang
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A low voltage and low power 60 GHz low noise amplifier (LNA) using 90 nm standard MS/RF CMOS technology is presented in this paper. For the low voltage applications, a three-stage common source configuration is utilized. By using forward-body-bias, our LNA can operate at 0.7 V supply voltage and consumes 4.9 mW dc power while maintaining a peak gain of 13 dB at 55 GHz and 12.6 dB at 60 GHz with a compact chip size of 0.351 mm2. The 1-dB gain bandwidth is 54.5 to 61.0 GHz and the minimum noise figure is 6.3 dB at 64 GHz. This MMIC successfully demonstrates the forward-body-biased LNA in millimeter-wave frequency region with the lowest supply-voltage among the published LNAs around 60 GHz.

Published in:

Microwave Conference, 2009. EuMC 2009. European

Date of Conference:

Sept. 29 2009-Oct. 1 2009