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High-efficiency GaN HEMT power amplifier design based on inverse class-e topology

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4 Author(s)
Yong-Sub Lee ; Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea ; Mun-Woo Lee ; Sang-Ho Kam ; Yoon-Ha Jeong

This paper reports a high-efficiency GaN HEMT power amplifier (PA) based on the inverse class-E topology. The parasitic inductance and large output capacitance of the packaged active device are used as the series inductance and compensated by a shunt inductor, respectively. The composite right/left-handed transmission line is used as a harmonic control network. For the experimental validation, an inverse class-E PA is designed using a GaN HEMT and tested with a continuous wave at 1 GHz. From the measured results, the power-added efficiency (PAE) of 78.8% with a gain of 19.03 dB is achieved at an output power of 41.03 dBm.

Published in:

Microwave Conference, 2009. EuMC 2009. European

Date of Conference:

Sept. 29 2009-Oct. 1 2009