By Topic

InP, W-band, oscillator stabilized with a resonant cavity created by Wafer Level Packaging

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Hon, P.W.C. ; Northrop Grumman Corp., Redondo Beach, CA, USA ; Farkas, D. ; Itoh, T. ; Chang-Chien, P.P.
more authors

In this paper a W-band oscillator using Wafer Level Packaging (WLP) technology is reported. To the best of the authors' knowledge this is the first oscillator using a stabilizing cavity resonator created through the use of WLP. By using WLP a cavity consisting of more than one substrate can be created. Since quality factor is directly proportional to volume, a cavity of larger volume will lend itself to a better quality factor. In this work, a 2 finger 40 mum device fabricated in Northrop Grumman Aerospace Systems' (NGAS) 0.1mum InP HEMT technology is combined with a stabilizing resonant cavity created using WLP. With this approach, a 101 GHz oscillator has been achieved that has a measured output power of -16.6 dBm and phase noise at a 1 MHz offset of -77.4 dBc/Hz.

Published in:

Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European

Date of Conference:

28-29 Sept. 2009