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An optical photo lithography based 0.15 μm GaAs PHEMT process and 2 mil-substrate technology that enables high production throughput and low cost is described. The developed process achieved Imax = 575 mA/mm, BVgd = 14 V, and 753 mW/mm of output power density at P-1 condition at 18 GHz. Design and test results for balanced and single-ended power amplifiers (PA) for 40 to 85 GHz applications are described as process capability verification. Balanced PA MMICs shows 18 dB of small-signal gain and 17 dBm of output power up to 85 GHz frequencies. MMIC test results verified the process capability to manufacture MMIC devices for applications up to 90 GHz.