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40 to 85GHz power amplifier MMICs using an optical lithography based low cost GaAs PHEMT process

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3 Author(s)
Fujii, K. ; Avago Technol., San Jose, CA, USA ; Stanback, J. ; Morkner, Henrik

An optical photo lithography based 0.15 μm GaAs PHEMT process and 2 mil-substrate technology that enables high production throughput and low cost is described. The developed process achieved Imax = 575 mA/mm, BVgd = 14 V, and 753 mW/mm of output power density at P-1 condition at 18 GHz. Design and test results for balanced and single-ended power amplifiers (PA) for 40 to 85 GHz applications are described as process capability verification. Balanced PA MMICs shows 18 dB of small-signal gain and 17 dBm of output power up to 85 GHz frequencies. MMIC test results verified the process capability to manufacture MMIC devices for applications up to 90 GHz.

Published in:

Microwave Conference, 2009. EuMC 2009. European

Date of Conference:

Sept. 29 2009-Oct. 1 2009

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