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A new type of active device is presented, which can provide relatively large signal powers in the frequency range up to 2 THz. It is based on an electron resonance structure formed by a semiconductor heterojunction structure. The electrons of the n-layer need to be accelerated by an applied alternating voltage Ve They reach the barrier of the wide-gap semiconductor and are reflected there without loss of kinetic energy. They then travel ballistically towards the opposite barrier, where they are reflected again. When Ve changes the polarity, this process continues. The resulting electron resonance produces THz signals.