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Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier at 670 nm

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5 Author(s)
Chi, Mingjun ; Dept. of Photonics Eng., Tech. Univ. of Denmark, Roskilde, Denmark ; Jensen, O.B. ; Erbert, G. ; Sumpf, B.
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A narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. 800 mW output power is obtained, and the laser system is tunable from 655 to 679 nm.

Published in:

Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on

Date of Conference:

30-3 Aug. 2009