By Topic

Strain contrast of dilute semiconductor GaN1-xAsx and Si1-yCy hetero-epitaxial films in annular dark field images

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Wu, X. ; Inst. for Microstruct. Sci., Nat. Res. Council Canada, Ottawa, ON, Canada ; Baribeau, J.‐M. ; Gupta, J.A.

The lower average atomic number strained GaNxAs1-x (x = 0.029 and 0.045) and Si1-yCy (y les 0.015) films were found to be brighter than the higher average atomic number GaAs and Si in annular dark field (ADF) images.

Published in:

Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on

Date of Conference:

30-3 Aug. 2009