Cart (Loading....) | Create Account
Close category search window

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Lichtenwalner, D.J. ; Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7920, USA ; Misra, V. ; Dhar, S. ; Sei-Hyung Ryu
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Lateral metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated on 4H-SiC utilizing deposited dielectrics and gate-last processing. The bilayer dielectric consists of thin nitrided SiO2 covered by 25 nm of Al2O3 deposited using atomic layer deposition. Field-effect mobility and threshold voltage (VT) vary with SiC nitric oxide (NO) anneal temperature. Peak mobility of 106 cm2/Vs was obtained with corresponding VT of 0.8 V. The peak mobility decreases to 61 cm2/Vs with a lower temperature NO anneal, while the VT increased to 1.4 V. Thus with proper gate engineering, high-mobility normally off MOSFET devices can be obtained, leading to higher-performance gate-controlled power devices.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 15 )

Date of Publication:

Oct 2009

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.