By Topic

A Gradient-Based Inverse Lithography Technology for Double-Dipole Lithography

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Wei Xiong ; Inst. of Microelectron., Tsinghua Univ., Beijing, China ; Jinyu Zhang ; Yan Wang ; Zhiping Yu
more authors

Resolution enhancement techniques (RETs) have become indispensable for the sub-wavelength optical lithography. Inverse lithography technology (ILT) is one kind of RETs, which attempts to consider the mask synthesis as an inverse problem and compute the optimum mask by using the entire area of the design pattern with a rigorous mathematical approach. Doubledipole lithography (DDL) uses two orthogonal dipole illuminations and one or two masks to print the desired wafer pattern. The main challenge of using such an IC-manufacturing technique remains how to properly synthesize the proper mask pattern for the arbitrarily given target pattern. This paper presents a gradient-based ILT approach addressing the problem above, called DDL-ILT. This method has been demonstrated by synthesizing various kinds of masks for printing 45-nm critical dimension (CD) features. Images with good fidelity have been achieved.

Published in:

Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on

Date of Conference:

9-11 Sept. 2009