By Topic

Benchmarking the Accuracy of PCA Generated Statistical Compact Model Parameters Against Physical Device Simulation and Directly Extracted Statistical Parameters

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Cheng, B. ; Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK ; Moezi, N. ; Dideban, D. ; Roy, G.
more authors

Statistical variability is a major challenge for CMOS scaling and integration. In order to achieve variability aware design, it's critical important to reliably transfer device characteristics statistical variability information into compact models. A PCA based statistical compact modeling strategy is benchmarked against 'atomistic' device simulation and direct statistical parameter extraction strategy. The results indicate that PCA based approach may introduce considerable error in tail of distribution, which in turn may generate pessimistic or optimistic conclusions in statistical circuit simulation.

Published in:

Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on

Date of Conference:

9-11 Sept. 2009