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Mobility degradation due to the interface trap generated by the NBTI stress is simulated considering the discrete nature of the interface trap. We evaluate the relationship between threshold voltage shift (DeltaVth) and drain current degradation (DeltaID) including the mobility degradation due to the traps. The results can be used, for example, to predict DeltaVth in the On-the-fly NBTI measurement. Moreover, the statistical modeling for the degradation of ID due to the spatial distribution of the interface trap is investigated.