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Simulation on NBTI Degradation Due to Discrete Interface Traps Considering Local Mobility Model and Its Statistical Effects

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5 Author(s)
SeongWook Choi ; Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea ; Sooyoung Park ; Hong-Hyun Park ; Young June Park
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Mobility degradation due to the interface trap generated by the NBTI stress is simulated considering the discrete nature of the interface trap. We evaluate the relationship between threshold voltage shift (DeltaVth) and drain current degradation (DeltaID) including the mobility degradation due to the traps. The results can be used, for example, to predict DeltaVth in the On-the-fly NBTI measurement. Moreover, the statistical modeling for the degradation of ID due to the spatial distribution of the interface trap is investigated.

Published in:
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on

Date of Conference: 9-11 Sept. 2009

Page(s):
1 - 4
ISSN :
1946-1569
E-ISBN :
978-1-4244-3949-2
Print ISBN:
978-1-4244-3974-8
INSPEC Accession Number:
10941374
Conference Location :
San Diego, CA
Digital Object Identifier :
10.1109/SISPAD.2009.5290198

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