Simulation on NBTI Degradation Due to Discrete Interface Traps Considering Local Mobility Model and Its Statistical Effects

Mobility degradation due to the interface trap generated by the NBTI stress is simulated considering the discrete nature of the interface trap. We evaluate the relationship between threshold voltage shift (DeltaV
_th
) and drain current degradation (DeltaI
_D
) including the mobility degradation due to the traps. The results can be used, for example, to predict DeltaV
_th
in the On-the-fly NBTI measurement. Moreover, the statistical modeling for the degradation of I
_D
due to the spatial distribution of the interface trap is investigated.