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Integrated Stress and Process Calibration in Strained-Si Devices

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4 Author(s)
Yu, T.-H. ; R&D Hsinchu, Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan ; Tu, K.-C. ; Sheu, Y.M. ; Diaz, C.H.

We present a novel calibration methodology that (i) integrates dopant diffusion, mechanical strain and bandgap narrowing for accurate device short channel effect modeling and (ii) deploys stress dependent mobility model for robust device performance projection especially on effective drive current (Ideff). Good agreement is obtained between the model calibration and experimental measurements over the full gate length range examined. Moreover, a general mobility gain with respect to uniaxial stress is presented.

Published in:

Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on

Date of Conference:

9-11 Sept. 2009