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Monolithic millimeter-wave Schottky-diode-based frequency converters with low drive requirements using an InP HBT-compatible process

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11 Author(s)
E. W. Lin ; Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA ; H. Wang ; K. W. Chang ; L. Tran
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This paper describes the successful development of monolithic millimeter-wave frequency converter circuits using an InP HBT-compatible Schottky-diode process. A 94 GHz singly-balanced mixer and a 47-to-94 GHz passive doubler have been fabricated and tested, and both designs have attained admirable conversion loss with low input drive requirements. The mixer has also demonstrated significant improvement in noise figure at low intermediate frequencies compared to a GaAs HEMT diode mixer. At an IF of 1 MHz, the InP HBT diode mixer achieved a DSB noise figure of 16 dB, which is a 17 dB improvement compared to the GaAs HEMT diode mixer.

Published in:

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE

Date of Conference:

Oct. 29 1995-Nov. 1 1995