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Browse Journals & Magazines > Applied Physics Letters ...> Volume:95 Issue:15 Help

In situ passivation of InP surface using H2S during metal organic vapor phase epitaxy

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5 Author(s)
Lu, Hong-Liang ; Department of Electronic Engineering and Information Systems, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan ; Terada, Yuki ; Shimogaki, Y. ; Nakano, Y.
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An in situ surface passivation of InP(100) using H2S during metal organic vapor phase epitaxy has been characterized by x-ray photoemission spectroscopy and photoluminescence. X-ray photoelectron spectra indicate that the H2S-treated InP at 300 °C is free of P and In oxides even after exposure to air. The enhancement of photoluminescence intensity confirms that H2S passivation of an InP epilayer can reduce the surface defects. It is shown that H2S treatment results in In–S bonds, which dominate the sulfur-passivated InP surface, effectively suppressing interface oxidation during the subsequent ultrathin Al2O3 dielectric film growth.

Published in:
Applied Physics Letters  (Volume:95 ,  Issue: 15 )

Date of Publication: Oct 2009

Page(s):
152103 - 152103-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3233935
Date of Current Version :
20 October 2009
Issue Date :
Oct 2009

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