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Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide

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6 Author(s)
Saint-Cast, Pierre ; Fraunhofer Institute for Solar Energy (ISE), Heidenhofstrasse 2, D-79110 Freiburg, Germany ; Kania, D. ; Hofmann, M. ; Benick, J.
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Aluminum oxide layers can provide excellent passivation for lowly and highly doped p-type silicon surfaces. Fixed negative charges induce an accumulation layer at the p-type silicon interface, resulting in very effective field-effect passivation. This paper presents highly negatively charged (Qox=-2.1×1012 cm-2) aluminum oxide layers produced using an inline plasma-enhanced chemical vapor deposition system, leading to very low effective recombination velocities (∼10 cms-1) on low-resistivity p-type substrates. A minimum static deposition rate (100 nmmin-1) at least one order of magnitude higher than atomic layer deposition was achieved on a large carrier surfaces (∼1 m2) without significantly reducing the resultant passivation quality.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 15 )

Date of Publication:

Oct 2009

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