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Statistical circuit simulation with measurement-based active device models: implications for process control and IC manufacturability

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3 Author(s)
Root, D.E. ; Microwave Technol. Div., Hewlett-Packard Co., Santa Rosa, CA, USA ; McGinty, D. ; Hughes, B.

This paper presents a new approach to statistical active circuit design which unifies device parametric-based process control and non-parametric circuit simulation. Predictions of circuit sensitivity to process variation and yield-loss of circuits fabricated in two different GaAs IC processes are described. The simulations make use of measurement-based active device models which are not formulated in terms of conventional parametric statistical variables. The technique is implemented in commercially available simulation software (HP MDS).

Published in:

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE

Date of Conference:

Oct. 29 1995-Nov. 1 1995