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The surface-potential-based compact model HiSIM-SOI for Silicon-On-Insulator MOSFETs

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7 Author(s)
H. J. Mattausch ; Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi, Japan ; N. Sadachika ; S. Kusu ; K. Ishimura
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The compact circuit simulation model HiSIM-SOI for silicon-on-insulator (SOI)-MOSFET solves the three surface potentials of the SOI-MOSFET accurately without sacrificing simulation time. Depending on device structure and biasing conditions the SOI-MOSFET device may operate in partially depleted (PD) or fully depleted (FD) modes and a smooth transition between these modes is prerequisite for a good compact model. HiSIM-SOI is verified to fulfill these requirements and to cover all the operational regions of SOI-MOSFETs. It is also demonstrated that the floating-body effect, which determines key SOI-MOSFET properties like the kink effect or the history effect, can be accurately captured within the model calculation in a simple way without introducing an additional node in the compact model. Furthermore, HiSIM-SOI correctly reproduces measured data of both body-contact and floating-body devices.

Published in:

Mixed Design of Integrated Circuits & Systems, 2009. MIXDES '09. MIXDES-16th International Conference

Date of Conference:

25-27 June 2009