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Radiation effects on SOI electrostatic comb drive actuators of MEMS devices

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3 Author(s)
Lozano, A. ; Centro de Electron. e Inf., Inst. Nac. de Tecnol. Ind. (INTI), Buenos Aires, Argentina ; Palumbo, F. ; Alurralde, F.

Considerable effort has gone into the study of the failure mechanisms and reliability of micro-electro-mechanical-systems (MEMS) to extend its use to critical areas. In this paper the electrostatic comb drive actuator of SOI microrelays prototype is evaluated for space applications. The MEMS devices are subjected to uniform proton beam of 10 MeV, while its response is monitored by electrical characteristics for successive irradiation pulses. Although the system shows a significant increase of positive trapped charge, it has not been found any limitation on the functionality based in the main parameters such as the actuation voltage, the leakage currents, and conduction mechanism of the switch.

Published in:

Micro-Nanoelectronics, Technology and Applications, 2009. EAMTA 2009. Argentine School of

Date of Conference:

1-2 Oct. 2009