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Browse Journals & Magazines > Applied Physics Letters ...> Volume:95 Issue:14 Help

Influence of quantum-interference on the fringing-field magnetoresistance of hybrid ferromagnetic/semiconductor devices

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6 Author(s)
Lin, T.-Y. ; Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14216, USA ; Bae, J.-U. ; Bohra, G. ; Lim, K.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3236775 

We investigate magnetotransport in hybrid ferromagnetic devices, comprised of laterally confined semiconductor channels that are bridged by nanomagnets that generate magnetic barriers. We identify a regime of low-temperature behavior in these devices, in which the magnetoresistance generated by the nanomagnets is suppressed with decrease of temperature. This result is shown to be correlated with the onset of quantum-interference effects (weak localization) in the semiconductor channel.

Published in:
Applied Physics Letters  (Volume:95 ,  Issue: 14 )

Date of Publication: Oct 2009

Page(s):
143113 - 143113-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3236775
Product Type:
Journals & Magazines
Date of Current Version :
13 October 2009
Issue Date :
Oct 2009

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