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Influence of quantum-interference on the fringing-field magnetoresistance of hybrid ferromagnetic/semiconductor devices

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6 Author(s)
Lin, T.-Y. ; Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14216, USA ; Bae, J.-U. ; Bohra, G. ; Lim, K.
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We investigate magnetotransport in hybrid ferromagnetic devices, comprised of laterally confined semiconductor channels that are bridged by nanomagnets that generate magnetic barriers. We identify a regime of low-temperature behavior in these devices, in which the magnetoresistance generated by the nanomagnets is suppressed with decrease of temperature. This result is shown to be correlated with the onset of quantum-interference effects (weak localization) in the semiconductor channel.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 14 )