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Temperature-stable voltage reference based on different threshold voltages of NMOS transistors

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4 Author(s)
Xia, X. ; Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China ; Xie, L. ; Sun, W. ; Shi, L.

A temperature-stable voltage reference based on threshold voltages of enhancement and depletion NMOS transistors has been presented and implemented with a 0.5 mum DPDM CMOS technology. The problem of a fixed voltage reference value is avoided by different parameter design. A significant reduce of temperature dependence of mobility is also achieved. The chip s area is 0.014 mm2. The test results show that the operation supply voltage is from 2 to 5 V, the maximum supply current is 8.24 muA, and the average reference voltage is 765 mV with an average line regulation of plusmn0.187%/V. A typical temperature coefficient of 39.2 ppm/degC for a temperature range of 0-100degC is obtained. The power-supply rejection ratio, without any filtering capacitors, is -46 dB at 100 Hz and -32 dB at 1 MHz for the smallest supply voltage.

Published in:

Circuits, Devices & Systems, IET  (Volume:3 ,  Issue: 5 )