High temperature stable RF MEMS switch based on tungsten-titanium

In this paper we present a high temperature stable, capacitive RF MEMS switch based on a tungsten-titanium alloy. The evaluation of the temperature stability was done by annealing experiments up to 500°C. Due to an intrinsic residual stress the switch features a large out of plane deflection. This allows the combination of high open-state isolation with a moderate pull-in voltage and with high restoring forces. Measurements of the high frequency performance in the 20 to 36 GHz range provided good results for insertion loss and isolation.