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High temperature stable RF MEMS switch based on tungsten-titanium

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6 Author(s)
Klein, S. ; Micromechanics, Microfluidics/Microactuators, Saarland Univ., Saarbrucken, Germany ; Thilmont, S. ; Ziegler, V. ; Prechtel, U.
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In this paper we present a high temperature stable, capacitive RF MEMS switch based on a tungsten-titanium alloy. The evaluation of the temperature stability was done by annealing experiments up to 500degC. Due to an intrinsic residual stress the switch features a large out of plane deflection. This allows the combination of high open-state isolation with a moderate pull-in voltage and with high restoring forces. Measurements of the high frequency performance in the 20 to 36 GHz range provided good results for insertion loss and isolation.

Published in:

Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International

Date of Conference:

21-25 June 2009