Referenced Items are not available for this document.
In this paper we present a high temperature stable, capacitive RF MEMS switch based on a tungsten-titanium alloy. The evaluation of the temperature stability was done by annealing experiments up to 500degC. Due to an intrinsic residual stress the switch features a large out of plane deflection. This allows the combination of high open-state isolation with a moderate pull-in voltage and with high restoring forces. Measurements of the high frequency performance in the 20 to 36 GHz range provided good results for insertion loss and isolation.
Published in:
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Date of Conference: 21-25 June 2009
- Page(s):
- 1409 - 1412
- E-ISBN :
- 978-1-4244-4193-8
- Print ISBN:
- 978-1-4244-4190-7
- INSPEC Accession Number:
- 10917158
- Conference Location :
- Denver, CO
- Digital Object Identifier :
- 10.1109/SENSOR.2009.5285836
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