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A detailed study of yield and reliability for vacuum packages fabricated in a wafer-level Au-Si eutectic bonding process

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2 Author(s)
Mitchell, J.S. ; Center for Wireless Integrated Microsyst. (WIMS), Univ. of Michigan, Ann Arbor, MI, USA ; Najafi, K.

An Au-Si eutectic wafer-level bonding process was developed for low-temperature vacuum packaging of MEMS devices. Using Au-Si eutectic bonding, devices were encapsulated by bonding a silicon cap wafer to a device wafer. Micromachined Pirani vacuum sensors were encapsulated in order to characterize the packaged pressures. These packages had cavity dimensions of 2.3times2.3 mm with a depth of 90 mum. Yields of 84.6% and 94.1% were achieved in packages with bond ring widths of 100 and 150 mum. With the use of getters and a pre-bond outgassing step, pressures from <3.7 to 23.3 mTorr were achieved. Furthermore, pressures were shown to remain stable to within plusmn2.5 mTorr for over 4 years of testing.

Published in:

Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International

Date of Conference:

21-25 June 2009