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In this work we present for the first time a systematic investigation for the dielectric charging in silicon nitride films for RF MEMS capacitive switches based on Kelvin probe microscopy methodology. The effect of the underneath physical layer over which the dielectric will be deposited has been first investigated through depositing SiN films over thermally grown oxide, evaporated gold and electroplated gold layers. Then, the dielectric films have been deposited with different thicknesses in order to study the impact of dielectric thickness. Finally, the effect of the deposition conditions has been investigated through depositing SiN films using low and high frequency PECVD method.