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Atomic layer deposition enabled interconnect technology for vertical nanowire array devices

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7 Author(s)
Myongjai Lee ; DARPA Center for Integrated Micro/Nano-Electromech. Transducers (iMINT), Univ. of Colorado, Boulder, CO, USA ; Jen-Hau Cheng ; Bertness, K. ; Sanford, N.
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In this study, we have demonstrated atomic layer deposition (ALD) enabled interconnection technology for vertical, as-grown c-axis oriented GaN nanowire (NW) arrays encapsulated by benzocyclobutene (BCB). The nano-scaled ALD multilayer is essential to provide conformal dielectric/conductor coverage and precise thickness control for NW interconnects. Cross-sectional images taken in a focused ion beam (FIB) tool and resistance measurement performed on the NW devices confirms the conformality of ALD-W films. This interconnect technology can be applied to different vertical nanowire array devices, such as nanowire light emitting diodes (LEDs), metal semiconductor field effect transistor (MESFET), resonator or solid state super-capacitors.

Published in:

Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International

Date of Conference:

21-25 June 2009