By Topic

Development and evaluation of AuSi eutectic wafer bonding

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Lin, Y.-C. ; WPI Adv. Inst. for Mater. Res., Tohoku Univ., Sendai, Japan ; Baum, M. ; Haubold, M. ; Fromel, J.
more authors

In this paper, wafer-to-wafer AuSi eutectic bonding was investigated and evaluated with various sets of experimental parameters. Single crystalline Si and amorphous Si were bonded with different dimension Au layers and observed by optical measurements. Material composition, adhesion layer, electrical insulation, bonding parameters, and surface pre-treatments were discussed and have improved bonding performance. Bond strength determined by micro-chevron-test and shear test was evaluated as well as hermeticity. High bond yield was achieved with 4 inch and 6 inch wafer stacks.

Published in:

Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International

Date of Conference:

21-25 June 2009