By Topic

Functionality of a novel overload resistant silicon high pressure sensing element

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Heinickel, P. ; Inst. of Electromech. Design, Tech. Univ. Darmstadt, Darmstadt, Germany ; Werthschutzky, R.

This paper presents a novel miniaturized overload resistant piezoresistive silicon high-pressure sensor for a pressure range up to 500 MPa. The novel composite element is made of a solid body silicon chip with implanted piezoresistive resistors. A solid body glass substrate is jointed to the silicon by anodic bonding. The operating mode is based on mechanical strain of all-round pressurized silicon and mechanical mismatched substrate. This paper also presents the verification of the functionality on the basis of repeatable metrological investigations with 200 MPa of experimental designs and analytical investigations as well as finite element analysis.

Published in:

Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International

Date of Conference:

21-25 June 2009