By Topic

Higher-order mode internal electrostatic transduction of a bulk-mode ring resonator on a quartz substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Ziaei-Moayyed, M. ; Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA ; Hsieh, J. ; Chen, J.-W.P. ; Quevy, E.P.
more authors

This paper reports the use of internal electrostatic transduction to excite and detect the fifth bulk lateral mode of a 54 mum outer-diameter, 12 mum-wide, and 2.5 mum-thick poly-silicon ring resonator at 1.95 GHz, with a quality factor Q~8000 in room air. The resonator is fabricated on a quartz substrate to reduce electrical feedthrough. The transducer is a sandwich of 500 nm of electrically floating polysilicon between layers of 50 nm of Si3N4, formed by refill of a trench etched in the structural polysilicon layer. This scalable double-gap internal electrostatic transducer is compatible with conventional optical lithography, since its critical dimensions are defined by deposition.

Published in:

Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International

Date of Conference:

21-25 June 2009