By Topic

Catalyst patterned growth of interconnecting graphene layer on SiO2/Si substrate for integrated devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Lee, Yun-Hi ; Department of Physics, National Research Laboratory for Nano Device Physics, Korea University, Seoul 136-713, Republic of Korea ; Lee, Jong-Hee

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The authors report a simple site selective growth for producing interconnecting suspended graphene on SiO2/Si substrate. The outcome of the process depends on the thickness of the catalyst (Ni) and process ambient on SiO2/Si wafer by low pressure fast heating chemical-vapor deposition at 820 °C for periods from 30 s to 10 min. Raman spectroscopy revealed that the graphene grown on the substrate consists of from 1 to ≪20 layers, with the number of layers depending on the thickness of the catalyst (Ni). Also, the thickness of Ni catalyst determines whether the graphite layers (GLs) are grown in a suspended form or adhered to the substrate. The possibility of producing qualified as-grown GL supported on a wafer without further processing, such as transferring to another substrate, should contribute to further scientific research and development of graphene.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 14 )