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<100> n-type metal-oxide-semiconductor field-effect transistor-embedded microcantilever sensor for observing the kinetics of chemical molecules interaction

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4 Author(s)
Jian Wang ; National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Institute of Microelectronics, Peking University, Beijing 100871, People’s Republic of China ; Wengang Wu ; Huang, Ying ; Yilong Hao

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This letter reports a silicon microcantilever sensor with an embedded n-type metal-oxide-semiconductor field-effect transistor (nMOSFET) for observing the kinetics of chemical molecules interaction based on surface stress sensing principle. In the sensors, the silicon cantilevers with gold coating and the channels of the embedded-nMOSFETs are configured along <100> crystal orientation. The kinetics of and the surface stress from chemical interactions between acetone, ethanol, nitroethane, and thiols molecules are observed, respectively, which follow the Langmuir model. The output signals of the nMOSFET-embedded cantilever sensors induced by various targets are different, which implies that the devices may allow for gaining insights into the kinetics of intermolecular interactions.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 12 )