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Role of shallow Si/SiO2 interface states on high frequency channel noise in n-channel metal-oxide-semiconductor field effect transistors

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4 Author(s)
Hao Su ; Microelectronics Centre School of Electrical and Electronics Engineering Nanyang Technological University, Singapore 639798, Singapore ; Hong Wang ; Tao Xu ; Rong Zeng

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3231924 

The role of shallow interface states on high frequency channel noise in n-channel metal-oxide-semiconductor field effect transistors (n-MOSFETs) has been studied. Our experimental results reveal that the excess channel noise in gigahertz range induced by hot carrier stress could be attributed to the carrier transitions associated with shallow interface states. This suggests that the shallow Si/SiO2 interface states in MOSFETs may play an important role in determining the channel noise in gigahertz frequency range.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 12 )

Date of Publication:

Sep 2009

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