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The effect of absorber doping on electrical and optical properties of nBn based type-II InAs/GaSb strained layer superlattice infrared detectors

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8 Author(s)
Myers, S. ; Department of Electrical and Computer Engineering, Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106, USA ; Plis, Elena ; Khoshakhlagh, Arezou ; Kim, Ha Sul
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We have investigated the electrical and optical properties of a nBn based InAs/GaSb strained layer superlattice detector as a function of absorber region background carrier concentration. Temperature dependent dark current, responsivity, and detectivity were measured. The device with a nonintentionally doped absorption region demonstrated the lowest dark current density with a specific detectivity at zero bias equal to 1.2×1011 cmHz1/2/W at 77 K. This value decreased to 6×1010 cmHz1/2/W at 150 K. This contrasts significantly with p-i-n diodes, in which the D* decreases by over two orders of magnitude from 77 to 150 K, making nBn devices promising for higher operating temperatures.

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Applied Physics Letters  (Volume:95 ,  Issue: 12 )