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Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy

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4 Author(s)
Ma, Bei ; Department of Electrical and Electronic Engineering, Graduate School of Engineering, Mie University, 1577 Kurimamachiya, Tsu 514-8507, Japan ; Hu, Weiguo ; Miyake, Hideto ; Hiramatsu, Kazumasa

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Effects of the nitridation of the r-plane sapphire were investigated on the growth of a-plane GaN. Surface morphology and crystal quality were very sensitive to the nitridated time. A high quality a-plane GaN with a pit free-surface was obtained with nitridation at 1100 °C for 5 min, compared with under- or overnitridation. Nitridated layer were identified as AlN grains with <1120> preferred orientation, which acted as the nuclearation layers for a-plane GaN growth. Moreover, the qualities improvements were attributed to enhancing grain uniformity and size with 5 min nitridation.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 12 )

Date of Publication:

Sep 2009

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