Referenced Items are not available for this document.
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3238362
A polycrystalline-Si thin-film transistor configured with independent double-gated structure and ultrathin channel film is proposed for use as a Si-oxide-nitride-oxide-Si memory device. Taking advantage of additional control gate bias offered by the independent double-gated scheme in addition to the driving gate, this work demonstrated that the reading window and programming efficiency can be improved by applying a proper control gate bias. It is also found that the relationship between programming/erasing speed and control gate bias is strongly related to channel film thickness. Our results indicate that the independent double-gated device possesses promising potential for future nonvolatile memory applications.
Published in:
Applied Physics Letters
(Volume:95
,
Issue:
13
)
Date of Publication: Sep 2009
- Page(s):
- 133502 - 133502-3
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.3238362
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 09 October 2009
- Issue Date :
- Sep 2009
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
